FDV303N-NL

field effect transistor, FDV303N-NL, SOT-23, 25 V, 0.35 W

Rated 5 Rating 5 | reviews | Write a review

Price:: US $0.10~0.20 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
	US $0.10~0.20

PartNumber:: FDV303N-NL

Brand:: Fairchild Semiconductor - Fairchild | Pack: SOT | D/C: 08+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Sold By

Ms. Laneya's store

(China (Mainland))

add to my favourite

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2012-09-10

From Other Seller

Part Number:FDV303N-NL
US $0.10 - 0.20
AT45DB161D-SU

US $1.50 - 3.50 / Piece
(0) Remove
TOP259EN

US $1.10 - 3.20 / Piece
(0) Remove
Quantity:

piece

Product Summary

The FDV303N-NL is an N-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device FDV303N-NL is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. The FDV303N-NL can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

Parametrics

FDV303N-NL absolute maximum ratings: (1)VDSS Drain-Source Voltage, Power Supply Voltage: 25 V; (2)VGSS Gate-Source Voltage, VIN: 8 V; (3)ID Drain/Output Current: 0.68 A; (4)PD Maximum Power Dissipation: 0.35 W; (5)TJ,TSTG Operating and Storage Temperature Range: -55 to 150℃; (6)ESD Electrostatic Discharge Rating: 6.0 kV.

Features

FDV303N-NL features: (1)25 V, 0.68 A continuous, 2 A Peak. RDS(ON)= 0.45 Ω @ VGS = 4.5 V; RDS(ON)= 0.6 Ω @ VGS= 2.7 V; (2)Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V; (3)Gate-Source Zener for ESD ruggedness.>6kV Human Body Model; (4)Compact industry standard SOT-23 surface mount package; (5)Alternative to TN0200T and TN0201T.