Product Summary

The BLF378. is a Silicon N-channel enhancement mode vertical D-MOS transistor. It is encapsulated in a 4-lead, SOT121B flanged package, with a ceramic cap. All leads are isolated from the flange. Amarking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the handbook General section for further information. The BLF378. is designed for industrial and military applications in the HF/VHF frequency range.

Parametrics

BLF378. absolute maximum ratings: (1)drain-source voltage:125V; (2)gate-source voltage:±20V; (3)drain current (DC):16A; (4)total power dissipation Tmb ≤ 25℃:220W; (5)storage temperature:-65℃ to +150℃; (6)junction temperature:200℃.

Features

BLF378. features: (1)High power gain; (2)Low intermodulation distortion; (3)Easy power control; (4)Good thermal stability; (5)Withstands full load mismatch.

Diagrams

BLF378. diagram

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Data Sheet

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Data Sheet

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Data Sheet

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