Product Summary

The 2SC3240 is designed as silicon NPN epitaxial type transistor specifically for high power amplifiers in HF band. Typical applications is output stage of transmitter in HF band SSB mobile ratio sets.

Parametrics

Absolute maximum ratings: (1)Its collector to base voltage would be 50V. (2)Its emitter to base voltage would be 5V. (3)Its collector to base voltage would be 20V. (4)Its collector current would be 25A. (5)Its collector dissipation would be 270W. (7)Its junction temperature would be +175℃. (8)Its storage temperature range would be from -55℃ to +175℃.

Features

Features: (1)High gain which means Gpe>=11.5dB and Po>=100W at f=30MHz, Vcc=12.5V and Pin=7W. (2)High ruggedness: ability to withstand 20:1 load VSWR when operated at f=30MHz, Po=100W and Vcc=12.5V. (3)Emitter ballasted construction. (4)Low thermal resistance ceramic package with flange.

Diagrams

Image Part No Mfg Description Data Sheet Download Pricing
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2SC3240
2SC3240

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Image Part No Mfg Description Data Sheet Download Pricing
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2SC3000
2SC3000

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2SC3011
2SC3011

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2SC3012
2SC3012

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2SC3025
2SC3025

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2SC3026
2SC3026

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2SC3038
2SC3038

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