(China (Mainland))
Product Summary
The 2SC2695 is a silicon NPN epitaxial planar type transistor. It is desgined for RF power amplifiers in UHF band mobile radio applications.
Parametrics
2SC2695 absolute maximum ratings: (1)collector to base voltage:35V; (2)emitter to base voltage:4V; (3)collector to emitter voltage:17V; (4)collector current:10A; (5)collector dissipation:3W or 75W; (6)junction temperature:175℃; (7)storage temperature:-55℃ to +175℃; (8)thermal resistance:50℃/W or 2℃/W.
Features
2SC2695 features: (1)high power gain:Gpe≥4.9dB @VCC=13.5V, Pin=9W, f=520MHz; (2)emitter ballasted construction and gold metallization for high reliability and good performances; (3)low thermal resistance ceramic package with flange; (4)ability of withstanding more than 20:1 load VSWR all phase when operated at VCC=15.2V, Po=30W, f=520MHz; (5)series equivalent input/output impedance:Zin=1.5+j2Ω @Po=30W, VCC=13.5V, f=520MHz, Zout=2.5+j1Ω.
Diagrams
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 2SC2000 |
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2SC2001 |
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2SC2002 |
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2SC2003 |
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2SC2020 |
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2SC2021 |
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Negotiable |
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